PHI ADEPT 2
Dynamic SIMS for automated depth profile analysis
The PHI ADEPT 2 is the latest-generation Dynamic SIMS system from Physical Electronics / ULVAC-PHI. Building on the proven platform of its predecessor, the ADEPT-1010, the hardware and software have been specifically further developed to meet the increasing demands of modern semiconductor devices – offering higher sensitivity, better resolution and significantly greater automation. This makes the system equally suitable for developing new materials and for mass production.
Dynamic-SIMS (D-SIMS), also known in some quarters as quadrupole-SIMS (Q-pole-SIMS), is a highly sensitive analytical method for determining the depth distribution of elements in solids. A focused ion beam continuously ablates material from the sample surface; the secondary ions released in the process are analysed by mass spectrometry. This produces a precise profile of how dopants, impurities or other elements are distributed across the depth of a layer or component – with extremely low detection limits and high measurement speed.
Further System Benefits
- High speed and high sensitivity in SIMS analysis
- Ultimate depth resolution for precise layer characterisation
- Wide range of elements – from hydrogen to uranium
- Very low detection limits thanks to an excellent vacuum level
- Simple, automated operation thanks to state-of-the-art control software
- CE-compliant for use in the European market
At the heart of the PHI ADEPT 2: newly developed ion optics
At the heart of the PHI ADEPT 2 are newly designed ion columns for both the caesium (Cs⁺) and oxygen (O₂⁺) ion sources. They deliver higher beam brightness and optimised results across a wide range of sample materials. A shorter working distance between the lens and the sample further improves focusing: the ion beam can be focused to a smaller diameter, resulting in more precise and uniform ablation craters – an important prerequisite for accurate depth profiles, particularly for very thin or complex layered systems.
This is complemented by a new high-mass detection system, which can reliably detect even large molecular clusters such as CsM⁺ and Cs₂M⁺ – an advantage for the analysis of complex material systems, which are increasingly encountered in modern semiconductor technology.
Application Areas
The PHI ADEPT 2 is specifically designed for the analysis of dopants and impurities in thin films and semiconductor devices. Typical areas of application include:
The PHI ADEPT 2 is particularly relevant for:
SmartSoft-SIMS: intuitive control for greater automation
The new SmartSoft-SIMS control software features a modern, intuitive user interface that significantly simplifies multi-point measurements and recurring analysis workflows. Measurement routines can be set up efficiently and run automatically – this noticeably reduces the operational workload in day-to-day laboratory work and makes the PHI ADEPT 2 accessible even to users who do not work with complex SIMS measurement technology on a daily basis.
Optional ICP ion source for maximum stability
An ICP oxygen plasma source is available as an option. Compared to conventional Duoplasmatron sources, it delivers a higher ion current, a longer service life and improved beam stability – this extends the usable dynamic range of the measurement and is particularly advantageous for very small structures and for applications with high demands on long-term stability.
Seamless sample transfer without contact with air
A standardised transfer vessel solution allows samples to be transported between instruments without coming into contact with ambient air. This is particularly important when materials are sensitive to oxidation or contamination, and results need to remain consistent across multiple analytical techniques.
Why choose the PHI ADEPT 2?
The PHI ADEPT 2 is not intended as a replacement for highly specialised magnetic sector SIMS systems, but rather as a powerful yet cost-effective alternative for everyday industrial SIMS applications. Its strengths lie in areas where speed, ease of use, a high degree of automation and a manageable investment are required – such as in routine analysis and production monitoring. The system’s excellent vacuum level also offers clear advantages when analysing light elements such as hydrogen and carbon.
In short: the PHI ADEPT 2 brings high-precision depth profile analysis to where it is needed in day-to-day work – quickly, automatically and reliably.
