Analysis of ultra-thin layers:
In semiconductor production, extremely thin layers (often only a few atomic layers thick) are applied to wafers. TOF-SIMS can chemically and spatially resolve these layers to recognise impurities or doping, for example.

3D depth profiling:
TOF-SIMS can create a three-dimensional chemical profile by controlled ablation of the surface (sputtering). This is crucial for understanding the distribution of materials in transistor structures, for example.

Molecular identification:
Tandem MS can be used to differentiate between molecules with the same mass but different structures - such as isomeric compounds or degradation products of process chemicals.

Error analysis and quality assurance:
If a component fails, TOF-SIMS can help to identify residues, contamination or process errors - often down to the molecular level.

Process optimisation:
By precisely analysing layer compositions and interfaces, manufacturing processes can be specifically adapted to improve yield and reliability.